Associate Professor

Phone: (+86) 027-87557934


Academic Areas: Functional films and devices

Research Interests: Materials Physics

Academic Degrees

PhD in Material Chemistry & Physics,2007-2010, Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS);

MA in Materials Science,2004-2007, State Key laboratory of Advanced Technology for Materials and Processing Wuhan University of Technology and China University of Geosciences;

BA in Material Science and Engineering, 2000-2004,China University of Geosciences.

Professional Experience

School of Materials Science and Engineering, Huazhong University of Science and Technology, Associate Professor (2013-present);

Nano-System Organization Group, WPI Center for Materials Nanoarchitectonics, National Institute for Materials Science, Postdoctoral researcher,(2010-2013)

Working Papers

  1. Rui Yang, Kazuya Terabe, Yiping Yao, Tohru Tsuruoka,Tsuyoshi Hasegawa, James K Gimzewski and Masakazu Aono. Synaptic plasticity and memory functions achieved in aWO3-x-based nanoionics device by using the principle of atomic switch operation. Nanotechnology 24, 384003,(2013).
  2. Rui Yang, Kazuya Terabe, Guangqiang Liu, Tohru Tsuruoka, Tohru Tsuruoka, Tsuyoshi Hasegawa, James K. Gimzewski, and Masakazu Aono. On-demand nanodevice with electrical and neuromorphic realized by local ion migration. ACS Nano, 6, 9515, (2012).
  3. Rui Yang, Kazuya Terabe, Tohru Tsuruoka, Tsuyoshi Hasegawa, and Masakazu Aono.Oxygen migration process in the interfaces during bipolar resistance switching behavior of WO3-x-based nanoionics devices.Applied Physics Letters 100, 231603 (2012).
  4. R. Yang, X. M. Li , W. D. Yu, et al. The polarity origin of the bipolar resistance switching behaviors in metals/La0.7Ca0.3MnO3/Pt junctions. Applied Physics Letters, 95, 072105, (2009).
  5. R. Yang, X. M. Li , W. D. Yu, et al. Endurance improvement of resistance switching behaviors in the La0.7Ca0.3MnO3 film based devices with Ag-Al alloy top electrodes. Journal of Applied Physics 107, 063703, (2010)
  6. R. Yang, X. M. Li, W. D. Yu, et al. Stable bipolar resistance switching behaviors induced by the soft breakdown process at the Al/La0.7Ca0.3MnO3 interface. Journal of Physics D: Applied Physics, 42, 175408,(2009).
  7. R. Yang, X. M. Li, W. D. Yu, et al. Multiform Resistance Switching Effects in the Al/La0.7Ca0.3MnO3/Pt Structure. Electrochemical and Solid-State Letters, 12 (7) H281-H283 (2009).
  8. Rui Yang, Xiaomin Li. Improvement of resistance switching properties for Metal/La0.7Ca0.3MnO3/Pt devices. Phys. Status Solidi A, 208 (5) 1041-1046 (2011)
  9. R. Yang, X. M. Li, W. D. Yu, et al. Resistance switching properties of La0.67Ca0.33MnO3 thin films with Ag-Al alloy top electrodes. Applied Physics A-Materials Science &Processing 97,85, (2009).
  10. R. Yang, X. M. Li , W. D. Yu, et al. The effect of oxygen annealing on the resistance switching properties of the La0.7Ca0.3MnO3 films. Advanced Materials Research, 66. 127-130 (2009)
  11. R. Yang, S.Y. Shen, C.B. Wang, L.M. Zhang. Pulsed laser deposition of stoichiometric KNbO3 films on Si (100). Thin Solid Film, 516, 8559, (2008).
  12. R. Yang, S.Y. Shen, C.B. Wang, Q. Shen, Y.S. Gong, L.M. Zhang. Composition controlling of KNbO3 thin films prepared by pulsed laser deposition. Materials Letters, 61 (13),2658 (2007).

Awards and Honors

Patent list:

1. Kazuya Terabe, Rui Yang, Tohru Tsuruoka, Tsuyoshi Hasegawa and Masakazu Aono, Multifunctional electronic devices Application date:Oct.24th,2012, Japan Patent.

2. X. M. Li, R. Yang, W. D. Yu, et al., Modulation of the resistance switching modes in the multi-layer structures used in RRAM devices. Application number: 200910048823.0, China Patent.

3. W. D. Yu, X. M. Li, R. Yang, et al., The novel alloy electrodes used in the resistance switching random access memory devices. Application number: 200810200174.7, China Patent.


1. National Natural Science Foundation of China (Grant No. 51372095),2014-2016;

2. The Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure (SKL201408SIC), 2015-2016;

3. Fundamental Research Funds for the Central Universities (2014TS024 ),2014-2015.

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