Associate Professor

Phone: 186-9407-1968

Email: wfzhang@hust.edu.cn

Academic Areas: advanced semiconductor materials and devices, surface and interface science, high mobility channel CMOS devices

Research Interests: Center of Connection &Electronics Packaging

Wenfeng Zhang received the Ph.D. degree in materials science and engineering from City University of Hong Kong, Hong Kong, china, in 2009. Between 2009 and 2014, He worked as a postdoctoral research associate, JST-CREST project researcher and JSPS foreigner research fellow at the Center of Super-Diamond and Advanced Films (COSDAF) in City University of Hong Kong, Department of materials engineering in Tokyo University (Japan), respectively. He then joined the department of materials science and engineering, Huazhong University of Science and technology, as an associate professor. His research interests focus on the advanced semiconductor materials and devices for the post-silicon electronics, surface and interface science, high mobility channel CMOS devices etc. He has co-authored more than 50 academic journals/conference publications.

Academic Degrees

2009  Ph.D. in Department of Physics and Materials Science

      City University of Hong Kong (CityU, Hong Kong)                                                                                                                         

2006  M.Phil. in Department of Materials Science and Engineering

           The University of Science and Technology Beijing (USTB, Beijing, China)

2003  B.Eng. in Department of Materials Science and Engineering

      Southwest Jiaotong University (SWJTU, Chengdu, China) 

Selected Publications

  • W.F. Zhang, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi. Conduction band offset at GeO2/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies. Appl. Phys. Lett. 102, 102106 (2013)
  • W.F. Zhang, Z.B. He, G..D. Yuan, J.S. Jie, L.B. Luo, X.J. Zhang, Z.H. Chen, C.S. Lee, W.J. Zhang, S.T. Lee. High-Performance, Fully-Transparent and Flexible Zinc-Doped Indium Oxide Nanowire Transistors. Appl. Phys. Lett., 94, 123103 (2009)
  • W.F. Zhang, J.S. Jie, L.B. Luo, G..D. Yuan, Z.B. He, Z.Q. Yao, Z.H. Chen, C.S. Lee, W.J. Zhang, S.T. Lee. Hysteresis in In2O3:Zn nanowire field-effect transistor and its application as a nonvolatile memory device. Appl. Phys. Lett., 93,183111 (2008)
  • W.F. Zhang, J.S. Jie, Z.B. He, S.L. Tao, X. Fan, Y.C. Zhou, G..D. Yuan, L.B. Luo, C.S. Lee, W.J. Zhang, S.T. Lee. Single zinc-doped indium oxide nanowire as driving transistor for organic light-emitting diode. Appl. Phys. Lett., 92,153312 (2008)
  • C.H. Lee, C. Lu, T. Tabata, W.F. Zhang, T. Nishimura, K. Nagashio, and A. Toriumi, “Oxygen Potential Engineering of Interfacial Layer for Deep Sub-nm EOT High-k Gate St acks on Ge”, 2013 IEEE International Electron Device Meeting (IEDM2013), Dec. 9-11, 2013, Washington, DC)
  • C.H. Lee, T. Nishimura, T. Tabata, C. Lu, W.F. Zhang, K. Nagashio, and A. Toriumi, “Reconsideration of Electron Mobility in Ge n-MOSFETs from Ge Substrate Side -Atomically flat surface formation, layer-by-layer oxidation, and dissolved oxygen extraction”, 2013 IEEE International Electron Device Meeting (IEDM2013), Dec. 9-11, 2013, Washington, DC)
  • W.F. Zhang, C.H. Lee, C.M. Lu, T. Nishimura, K. Nagashio, K. Kita and A. Toriumi, "Effects of the Interface-related and Bulk-fixed Charges in Ge/GeO2 Stack on Band Bending of Ge Studied by X-ray Photoemission Spectroscopy", 2013 International Conference on Solid State Devices and Materials (SSDM), (Sep. 26, 2013, Hilton Fukuoka Sea Hawk, Fukuoka)
  • W.F. Zhang, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi, "Band-offset Determination at Ge/GeO2 Interface by Internal Photoemission and Charge-corrected X-ray Photo-electron Spectroscopies", 2012 International Conference on Solid State Devices and Materials (SSDM), pp.731-732,(Sep. 25, 2012, Kyoto)
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